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| Composite Transistors XN421F Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 0.650.15 2.8 -0.3 +0.2 +0.25 1.5 -0.05 6 0.650.15 1 0.3 -0.05 0.5 -0.05 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1-0.1 0.40.2 s Absolute Maximum Ratings Parameter Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Collector to base voltage Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 50 50 100 300 150 -55 to +150 Unit V V mA mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: OE Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VCB = 10V, IE = -2mA, f = 200MHz -30% 0.37 150 4.7 0.47 +30% 0.57 4.9 0.2 30 0.25 V V V MHz k min 50 50 0.1 0.5 1.0 typ max Unit V V A A mA 0 to 0.05 UN121F x 2 elements 0.1 to 0.3 0.8 0.16-0.06 +0.2 +0.1 1.450.1 s Features +0.1 +0.1 1 Composite Transistors PT -- Ta 500 XN421F Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) IC -- VCE 240 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 hFE -- IC VCE=10V 200 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 Ta=75C Forward current transfer ratio hFE Collector current IC (mA) 160 0.9mA 0.8mA 0.7mA 0.6mA 120 Ta=75C 80 25C -25C 120 IB=1.0mA 0.5mA 0.4mA 0.3mA 80 40 40 0.2mA 0.1mA 0 0 2 4 6 8 10 12 -25C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 2 |
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